On 2D/3D Numerical Oxidation Modeling: Calibration and Investigation of Silicon Crystal Orientation Effect on Stresses in Shallow Trench Isolations
نویسنده
چکیده
Shallow trench isolations (STI) process needs careful optimization of thermal annealings in order to minimize leakage currents which may result from excessive mechanical stresses. Due to its intrinsic three-dimensional structure, conventional 2D process simulator is no more relevant. This paper examines stress generation in STI using for the first time a 3D fully non-linear viscoelastic oxidation model implemented with the Finite Element Method.
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